Progress in the Sputtering Preparation of Hf_0.5Zr_0.5O₂ Ferroelectric Films and Memories

Abstract Since the first report of ferroelectric HfO 2 in 2011, researchers are making rapid progress in the understanding of both material properties and applications. Due to its compatibility with complementary metal oxide semiconductor, high coercivity voltage and the fact that ultrathin films remain ferroelectric, it is developed for applications in non‐volatile memories for data storage in different polarization states. As the most representative hafnium‐based ferroelectric materials, Hf 0.5 Zr 0.5 O 2 has received a great deal of attention due to its various of outstanding properties. Magnetron sputtering is a promising method for the preparation of ferroelectric HfO 2 films. This paper reviews recent developments in preparing Hf 0.5 Zr 0.5 O 2 ferroelectric films and memories. Meanwhile, due to the many advantages of sputtering, such as higher throughputs, low cost and no carbon contamination, this review mainly focused on the preparation of Hf 0.5 Zr 0.5 O 2 ferroelectric thin films by sputtering and explored its working mechanism and optimization strategy. In addition, the factors affecting the reliability of the memories, the mechanism of action, the solution ideas are introduced. These provide the basis for the design and optimization of Hf 0.5 Zr 0.5 O 2 ferroelectric films and memories.