Design Considerations and Fabrication Protocols of High-Performance Intrinsically Stretchable Transistors and Integrated Circuits

Intrinsically stretchable electronics represent a significant advancement in wearable and implantable technologies, as they offer a unique advantage by maintaining intimate tissue contact while accommodating movements and size changes. This capability makes them exceptionally well-suited for applications in human-machine interfaces, wearables, and implantables, where seamless integration with the human body is essential. To realize this vision, it is important to develop soft integrated circuits for on-body signal processing and computing. Our previous work has focused on developing high-density, intrinsically stretchable transistors capable of delivering high drive current, high-speed performance, and facilitating large-scale integrated circuits. These breakthroughs were achieved through a comprehensive and synergistic approach that encompassed material innovation, meticulous fabrication process design, precise device engineering, and strategic circuit design. Here we provide a comprehensive yet detailed description of these protocols, including design principles, material preparation, fabrication processes, and troubleshooting. These protocols are to empower other researchers to reproduce our developed processes, thus fostering further advancements in stretchable electronics. Specifically, we present in this article an enhanced protocol with explanations, complemented by photographs and instructional videos. This resource aims to bridge the knowledge gap and provide invaluable insights for researchers interested in developing high-performance intrinsically stretchable transistors and integrated circuits. We hope this helps to enable future advancements in the field of intrinsically stretchable electronics.

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Publication Details

Journal
ACS Nano
Published
2024-11-20
DOI
https://doi.org/10.1021/acsnano.4c14026
Citations
16
Primary Topic
Advanced Sensor and Energy Harvesting Materials
Type
article
Field-Weighted Citation Impact
2.95

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article

Design Considerations and Fabrication Protocols of High-Performance Intrinsically Stretchable Transistors and Integrated Circuits

Can Wu, Yating Yao, Donglai Zhong, Yuya Nishio et al.
16 citations
ACS Nano
Advanced Sensor and Energy Harvesting Materials
2.95
article

Design Considerations and Fabrication Protocols of High-Performance Intrinsically Stretchable Transistors and Integrated Circuits

Can Wu, Yating Yao, Donglai Zhong, Yuya Nishio, Jeffrey B.‐H. Tok, Yuanwen Jiang, Zhenan Bao, Weichen Wang, Yujia Yuan
article en
16 citations

Abstract

Intrinsically stretchable electronics represent a significant advancement in wearable and implantable technologies, as they offer a unique advantage by maintaining intimate tissue contact while accommodating movements and size changes. This capability makes them exceptionally well-suited for applications in human-machine interfaces, wearables, and implantables, where seamless integration with the human body is essential. To realize this vision, it is important to develop soft integrated circuits for on-body signal processing and computing. Our previous work has focused on developing high-density, intrinsically stretchable transistors capable of delivering high drive current, high-speed performance, and facilitating large-scale integrated circuits. These breakthroughs were achieved through a comprehensive and synergistic approach that encompassed material innovation, meticulous fabrication process design, precise device engineering, and strategic circuit design. Here we provide a comprehensive yet detailed description of these protocols, including design principles, material preparation, fabrication processes, and troubleshooting. These protocols are to empower other researchers to reproduce our developed processes, thus fostering further advancements in stretchable electronics. Specifically, we present in this article an enhanced protocol with explanations, complemented by photographs and instructional videos. This resource aims to bridge the knowledge gap and provide invaluable insights for researchers interested in developing high-performance intrinsically stretchable transistors and integrated circuits. We hope this helps to enable future advancements in the field of intrinsically stretchable electronics.

ACS NanoVol. 18(48)
University of Pennsylvania (US), Stanford University (US)
Stanford University, Samsung Advanced Institute of Technology, Samsung, Army Research Office
Affordable and clean energy
Openalex Percentile: Top 8%
Advanced Sensor and Energy Harvesting Materials
2.95
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