Laser-Induced Nanostructured Si and SiGe Layers for Enhanced Optical and Thermoelectric Performance
We investigate a method for fabricating layers that exhibit both high optical absorption and promising thermoelectric properties. Using plasma-enhanced chemical vapor deposition (PECVD), amorphous Si and Si<sub>72</sub>Ge<sub>28</sub> layers are deposited on glass substrates and subsequently processed via laser annealing to achieve nanostructured layers. Our results show that a single laser annealing pulse at 40 mJ yields the highest power factor, approximately 90 μW/m·K<sup>2</sup>. Additionally, we observe a maximum absorbance enhancement factor of 60 times in the spectral region near 880 nm for samples treated with a single pulse of 60 mJ compared to untreated samples. The effects of laser energy, the number of pulses, and material choice are further discussed.
Authors
- Fabien Giovannelli (ORCID: https://orcid.org/0000-0003-1248-077X)
- Eliane Bsaibess (ORCID: https://orcid.org/0000-0001-6814-5853)
- Stavros Christopoulos (ORCID: https://orcid.org/0000-0002-4877-6225)
- Ahmed Slimani (ORCID: https://orcid.org/0000-0002-4303-4169)
- Joumana El-Rifai (ORCID: https://orcid.org/0000-0002-1834-2557)
- Valerie Laux-Le Guyon (ORCID: https://orcid.org/0000-0002-2928-6685)
Institutions
- Université de Tours (FR)
- Centre National de la Recherche Scientifique (FR)
- Services déconcentrés d'appui à la recherche Val de Loire (FR)
- Sorbonne University Abu Dhabi (AE)
- Institut National des Sciences Appliquées Centre Val de Loire (FR)
Publication Details
- Journal
- ACS Omega
- Published
- 2024-11-20
- DOI
- https://doi.org/10.1021/acsomega.4c06006
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00