Ultra-flatbands in twisted penta-hexa-CB bilayer with large twist angles

We report the discovery of ultra-flatbands in twisted penta-hexa-carbon boron (PH-CB) bilayers, a finding with profound implications for condensed matter physics. Using first-principles calculations, we show that PH-CB bilayers exhibit an exceptionally narrow bandwidth of 0.13 meV at a distortion angle of 9.6°, indicating the robust electron correlation effects. This observation contrasts with the need for tiny twist angles in graphene to achieve similar effects. The PH-CB system, with its indirect bandgap of 2.11 eV, represents a versatile platform for exploring novel electronic phenomena that may lead to advances in quantum materials. Our results highlight the inverse relationship between wave function localization and bandwidth and provide a new perspective for the design of two-dimensional materials with tailored electronic properties.

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Publication Details

Journal
Applied Physics Letters
Published
2024-11-18
DOI
https://doi.org/10.1063/5.0236888
Citations
1
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
0.12

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article

Ultra-flatbands in twisted penta-hexa-CB bilayer with large twist angles

Xiaowen Shi, Rongrong Chen, Chenglong Jia, L. H. Yang et al.
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Applied Physics Letters
Graphene research and applications
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article

Ultra-flatbands in twisted penta-hexa-CB bilayer with large twist angles

Xiaowen Shi, Rongrong Chen, Chenglong Jia, L. H. Yang, Jin Gao, Kun Tao, Desheng Xue
article en
1 citations

Abstract

We report the discovery of ultra-flatbands in twisted penta-hexa-carbon boron (PH-CB) bilayers, a finding with profound implications for condensed matter physics. Using first-principles calculations, we show that PH-CB bilayers exhibit an exceptionally narrow bandwidth of 0.13 meV at a distortion angle of 9.6°, indicating the robust electron correlation effects. This observation contrasts with the need for tiny twist angles in graphene to achieve similar effects. The PH-CB system, with its indirect bandgap of 2.11 eV, represents a versatile platform for exploring novel electronic phenomena that may lead to advances in quantum materials. Our results highlight the inverse relationship between wave function localization and bandwidth and provide a new perspective for the design of two-dimensional materials with tailored electronic properties.

Applied Physics LettersVol. 125(21)
Center for Theoretical Physics (PL), Hongzhiwei Technology (China) (CN), Lanzhou University (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 58%
Graphene research and applications
0.12
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