STRENGTH PROPERTIES OF DIAZOQUINONE PHOTORESIST FP9120 FILMSON MONOCRYSTALLINE SILICON IMPLANTED WITH ANTIMONY IONS

The modification of the strength properties of films implanted with Sb+ ions of diazoquinone-novolac photoresist FP9120 on monocrystalline silicon during long-term storage was investigated by the indentation method. The dependence of microhardness on the load after implantation was nonmonotonic, due to the presence of elastic stresses at the photoresist/silicon interface. During long-term storage, their relaxation was observed, which leads to the disappearance of the non-monotonicity of the microhardness dependences on the load. The crosslinking of phenol-formaldehyde resin molecules during long-term storage was also noted. This process was stimulated by the decomposition of diazoquinone during ion implantation. During storage, the implanted photoresistive film becomes less susceptible to elastoplastic recovery after the load is removed.