Fabrication of silicon W and G center embedded light-emitting diodes for electroluminescence
The need for reliable quantum light sources drives our research to study color centers (CCs) in silicon as telecommunication O-band emitters. Building from photoluminescence measurements, we compare new electroluminescence measurements. To this end, we synthesized CC-embedded p-i-n junctions in silicon, creating CC light-emitting diode devices. The two types of CCs synthesized were G-centers and W-centers, which show zero-phonon lines at approximately 1279 nm and 1218 nm, respectively. Here, we present our device design, fabrication process flow, and report on the device performance results from measurements to date.
Authors
- Aaron M. Katzenmeyer (ORCID: https://orcid.org/0000-0002-5755-8537)
- Christian Pederson (ORCID: https://orcid.org/0009-0003-8017-5096)
- Matthew Pelton (ORCID: https://orcid.org/0000-0002-6370-8765)
- Marcelo Davanço (ORCID: https://orcid.org/0000-0001-8833-650X)
- Pradeep Namboodiri (ORCID: https://orcid.org/0000-0001-5551-7224)
- Kartik Srinivasan (ORCID: https://orcid.org/0000-0003-2589-3688)
- J. M. Pomeroy (ORCID: https://orcid.org/0000-0001-7848-7179)
- Nikki Ebadollahi
- Vijin Kizhake Veetil (ORCID: https://orcid.org/0000-0002-6338-0835)
Institutions
- National Institute of Standards and Technology (US)
- University of Maryland, College Park (US)
- University of Maryland, Baltimore County (US)
Publication Details
- Journal
- Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
- Published
- 2024-11-20
- DOI
- https://doi.org/10.1116/6.0004055
- Citations
- 3
- Primary Topic
- Silicon Nanostructures and Photoluminescence
- Type
- article
- Field-Weighted Citation Impact
- 0.35