Ferroelectrically gated sub-6 nm monolayer MoS<sub>2</sub> transistors for high-performance and low-power applications

A schematic device model and the corresponding transfer characteristics with upward ( P ↑ ) and downward ( P ↓ ) polarizations of BiAlO 3 at V b = 0.64 V are presented.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2024-11-20
DOI
https://doi.org/10.1039/d4tc03794d
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00
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article

Ferroelectrically gated sub-6 nm monolayer MoS2 transistors for high-performance and low-power applications

Jian‐Qing Dai, Miao-Wei Zhao, Dawei Deng, Jin Yuan et al.
Journal of Materials Chemistry C
2D Materials and Applications
article

Ferroelectrically gated sub-6 nm monolayer MoS2 transistors for high-performance and low-power applications

Jian‐Qing Dai, Miao-Wei Zhao, Dawei Deng, Jin Yuan, Yun-Ya Zhong
article en

Abstract

A schematic device model and the corresponding transfer characteristics with upward ( P ↑ ) and downward ( P ↓ ) polarizations of BiAlO 3 at V b = 0.64 V are presented.

Journal of Materials Chemistry CVol. 13(3)
Kunming University of Science and Technology (CN)
Openalex Percentile: Top 87%
2D Materials and Applications
DOISourceOpenAlex
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Ferroelectrically gated sub-6 nm monolayer MoS<sub>2</sub> transistors for high-performance and low-power applications — Jian‐Qing Dai, Miao-Wei Zhao, et al. · Journal of Materials Chemistry C (2024) | TGRS Research Map | TGRS