Semimetallization induced Hall anomaly in doped polymers
Hall anomaly related to deviations in Hall carrier concentrations have always been recognized as signs of charge incoherence in organic semiconductors, which lack ordered lattices. In this paper, we show that the Hall carrier concentration anomaly in doped polymers might be a result of semimetallization. Based on the observation of semimetal-like states, a dual-channel model, in which electrons and holes compensate the Hall voltages of each other, is employed to account for the anomaly. Observations of possible nonlinear Hall effect and temperature dependent Hall signs further support the origin of Hall anomaly from semimetal states. Published by the American Physical Society 2024
Authors
- Yawei Lv (ORCID: https://orcid.org/0000-0001-7869-6122)
- Yeliang Wang (ORCID: https://orcid.org/0000-0002-8896-0748)
- Zean Guo (ORCID: https://orcid.org/0000-0002-1209-8354)
- Chong Bi (ORCID: https://orcid.org/0000-0003-3745-3698)
- Ming Liu (ORCID: https://orcid.org/0000-0002-0937-7547)
- Mengmeng Li
- Jiawei Wang (ORCID: https://orcid.org/0000-0003-4752-5851)
- Ling Li (ORCID: https://orcid.org/0000-0002-7622-8752)
- Nianduan Lu (ORCID: https://orcid.org/0000-0001-8415-7627)
Institutions
- Beijing Institute of Technology (CN)
- Hunan University (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Physical Review Research
- Published
- 2024-11-20
- DOI
- https://doi.org/10.1103/physrevresearch.6.043180
- Citations
- 1
- Primary Topic
- Carbon Nanotubes in Composites
- Type
- article
- Field-Weighted Citation Impact
- 0.12
Funders
- National Natural Science Foundation of China
- Science and Technology Program of Hunan Province
- National Key Research and Development Program of China