Growth-related I3 defects in hexagonal Ge-2H and their thermal evolution

Authors

Laurent Travers
Laetitia Vincent (ORCID: https://orcid.org/0000-0002-9813-9259)
Elham Fadaly (ORCID: https://orcid.org/0000-0001-7074-8784)
Erik P. A. M. Bakkers (ORCID: https://orcid.org/0000-0002-8264-6862)
Charles Renard (ORCID: https://orcid.org/0000-0002-1772-0691)
Marcel A. Verheijen (ORCID: https://orcid.org/0000-0002-8749-7755)
Wilhelm Peters

Institutions

Centre de Nanosciences et de Nanotechnologies (FR)

Publication Details

Journal: SPIRE - Sciences Po Institutional REpository
Published: 2024-09-08
Primary Topic: Thin-Film Transistor Technologies
Type: article
Field-Weighted Citation Impact: 0.00

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article

Growth-related I3 defects in hexagonal Ge-2H and their thermal evolution

Laurent Travers, Laetitia Vincent, Elham Fadaly, Erik P. A. M. Bakkers et al.

Sep 8, 2024

SPIRE - Sciences Po Institutional REpository

Thin-Film Transistor Technologies

article

Growth-related I3 defects in hexagonal Ge-2H and their thermal evolution

Laurent Travers, Laetitia Vincent, Elham Fadaly, Erik P. A. M. Bakkers, Charles Renard, Marcel A. Verheijen, Wilhelm Peters

September 8, 2024article en

Abstract

No abstract available for this paper.

SPIRE - Sciences Po Institutional REpository

Centre de Nanosciences et de Nanotechnologies (FR)

Openalex Percentile: Top 82%

Thin-Film Transistor Technologies

Open Access PDF OpenAlex

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Growth-related I3 defects in hexagonal Ge-2H and their thermal evolution — Laurent Travers, Laetitia Vincent, et al. · SPIRE - Sciences Po Institutional REpository (2024) | TGRS Research Map | TGRS