Analysis of the Photoluminescence Bandgap Temperature Dependence to Investigate the Doping of Micrometric Size GaAs Crystals Grown on Silicon for Tandem Solar Cells Applications
This work presents and discusses the extraction of the active dopants density of GaAs layers from the modeling of the bandgap temperature dependence derived from photoluminescence measurements.
Authors
- Charles Renard (ORCID: https://orcid.org/0000-0002-1772-0691)
- Géraldine Hallais (ORCID: https://orcid.org/0000-0002-8946-6506)
- José Alvarez (ORCID: https://orcid.org/0000-0003-3558-8302)
- Guillaume Chau
- L. Dentz
- Denis Mencaraglia
- J.P. Connolly (ORCID: https://orcid.org/0000-0003-0342-1719)
- Alexandre Jaffré
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université Paris-Saclay (FR)
- Laboratoire de Génie Électrique et Électronique de Paris (FR)
- Sorbonne Université (FR)
- Centre de Nanosciences et de Nanotechnologies (FR)
- CentraleSupélec (FR)
Publication Details
- Journal
- physica status solidi (a)
- Published
- 2024-12-03
- DOI
- https://doi.org/10.1002/pssa.202400609
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Agence Nationale de la Recherche