Low-frequency noise of MoTe2 transistor: effects on ambipolar carrier transport and CYTOP doping
Low-frequency noise (LFN) characteristics of semiconductor devices pose a significant importance for understanding their working principle, particularly concerning material imperfections. Accordingly, substantial research endeavors have focused on characterizing the LFN of devices. However, the LFN characteristics of the ambipolar transistors have been rarely demonstrated. Herein, we investigate the effects of ambipolar carrier transport and CYTOP-induced p-type doping on low-frequency noise characteristics of MoTe<sub>2</sub> transistors. The source of the 1/f noise differs between the n-type (electron transport) and p-type (hole transport) modes. Notably, the influence of contact resistance is more pronounced in the n-type mode. CYTOP doping suppresses the n-type mode by introducing hole doping effects. Furthermore, CYTOP doping mitigates the impact of contact resistance on excess noise.
Authors
- Wonjun Shin (ORCID: https://orcid.org/0000-0001-9122-2458)
- Ryun‐Han Koo (ORCID: https://orcid.org/0000-0002-5708-3308)
- Sung‐Tae Lee (ORCID: https://orcid.org/0000-0002-7298-4382)
- Hocheon Yoo (ORCID: https://orcid.org/0000-0003-0772-3327)
- Dong Hyun Lee
- Raksan Ko
Institutions
- Gachon University (KR)
- Seoul National University (KR)
- Sungkyunkwan University (KR)
- Hongik University (KR)
Publication Details
- Journal
- Discover Nano
- Published
- 2024-11-19
- DOI
- https://doi.org/10.1186/s11671-024-04068-8
- Citations
- 3
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.35
Funders
- Hongik University
- Ministry of Trade, Industry and Energy