Atomic layer deposition of ultrathin nitride films for enhanced carrier lifetimes and photoluminescence in CdTe/MgCdTe double heterostructures
This work evaluates the passivation effectiveness of ultrathin nitride layers (SiNx, AlN, and TiN) deposited via atomic layer deposition on CdTe/MgCdTe double heterostructures for solar cell applications. Time-resolved photoluminescence and photoluminescence measurements revealed enhanced carrier lifetimes and reduced surface recombination, indicating improved passivation effectiveness. These results underscore the potential of SiNx as a promising passivation material to improve the efficiency of CdTe solar cells.
Authors
- Yong‐Hang Zhang (ORCID: https://orcid.org/0000-0002-0485-1924)
- Zheng Ju (ORCID: https://orcid.org/0009-0000-3669-4268)
- Haris Naeem Abbasi (ORCID: https://orcid.org/0000-0002-5648-9517)
- Zhenqiang Ma (ORCID: https://orcid.org/0000-0001-9214-1342)
- Xin Qi (ORCID: https://orcid.org/0000-0002-3674-5480)
Institutions
- University of Wisconsin–Madison (US)
- Arizona State University (US)
Publication Details
- Journal
- Journal of Applied Physics
- Published
- 2024-11-19
- DOI
- https://doi.org/10.1063/5.0226425
- Citations
- 3
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.63
Funders
- National Science Foundation
- Air Force Office of Scientific Research
- Air Force Research Laboratory