An Exploratory Study of 2D Monolayer MoS₂ Field Effect Transistors to Exploit Low-power and Energy-efficient Devices: A QuantumATK Tool-Based Approach

A revolutionary development in nanoelectronics has been the advancement of two-dimensional (2D) materials offers significant opportunities for high-performance devices. Its exceptional electrical properties at the nanoscale make monolayer molybdenum disulphide (MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>) an attractive candidate for field-effect transistors (FETs). A comprehensive characterization of monolayer MoS2 double gate field effect transistor (DGFET) is presented using QuantumATK, a powerful computational tool that enables monolayer MoS2 DGFET to be designed, simulated and characterised in an integrated manner. As a result of this work, electrical properties such as I-V Characteristics, I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>/I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf>, drain-induced barrier lowering (DIBL) and subthreshold swing (SS) are investigated. The key properties are highlighted in relation to the International Roadmap for Devices and Systems (IRDS) 2023. As a result of this study, various applications within a variety of sectors can be powered by environmentally conscious, power-efficient electronic devices.