Hole transportation and defect passivation properties at the perovskite/SAHTM interface: the effect of heteroatom groups and alkyl chain lengths in self-assembled phosphonic acid carbazole derivatives

Modifications of various heteroatom groups were introduced theoretically in self-assembled hole transporting materials (SAHTMs). Enhanced hole transportation and reduced defects at the perovskite/SAHTM interface were anticipated.

Authors

Xueqin Ran (ORCID: https://orcid.org/0000-0001-5662-4208)
Jianbing Zhu (ORCID: https://orcid.org/0000-0001-8186-9549)
Yonghua Chen (ORCID: https://orcid.org/0000-0002-9973-8843)
Chen Zhang (ORCID: https://orcid.org/0000-0001-8706-1372)
Lei Yang (ORCID: https://orcid.org/0000-0003-0258-8824)

Institutions

Nanjing Tech University (CN)
The Synergetic Innovation Center for Advanced Materials (CN)

Publication Details

Journal: Journal of Materials Chemistry C
Published: 2024-11-20
DOI: https://doi.org/10.1039/d4tc03399j
Citations: 3
Primary Topic: Semiconductor materials and interfaces
Type: article
Field-Weighted Citation Impact: 1.01

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article

Hole transportation and defect passivation properties at the perovskite/SAHTM interface: the effect of heteroatom groups and alkyl chain lengths in self-assembled phosphonic acid carbazole derivatives

Xueqin Ran, Jianbing Zhu, Yonghua Chen, Chen Zhang et al.

Nov 20, 2024

3 citations

Journal of Materials Chemistry C

Semiconductor materials and interfaces

1.01

article

Hole transportation and defect passivation properties at the perovskite/SAHTM interface: the effect of heteroatom groups and alkyl chain lengths in self-assembled phosphonic acid carbazole derivatives

Xueqin Ran, Jianbing Zhu, Yonghua Chen, Chen Zhang, Lei Yang

November 20, 2024article en

3 citations

Abstract

Modifications of various heteroatom groups were introduced theoretically in self-assembled hole transporting materials (SAHTMs). Enhanced hole transportation and reduced defects at the perovskite/SAHTM interface were anticipated.

Journal of Materials Chemistry CVol. 13(4)

Nanjing Tech University (CN), The Synergetic Innovation Center for Advanced Materials (CN)

Openalex Percentile: Top 24%

Semiconductor materials and interfaces

1.01

DOI Source OpenAlex

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Hole transportation and defect passivation properties at the perovskite/SAHTM interface: the effect of heteroatom groups and alkyl chain lengths in self-assembled phosphonic acid carbazole derivatives — Xueqin Ran, Jianbing Zhu, et al. · Journal of Materials Chemistry C (2024) | TGRS Research Map | TGRS