Mechanism of oxygen reduction <i>via</i> chemical affinity in NiO/SiO<sub>2</sub> interfaces irradiated with keV energy hydrogen and helium ions for heterostructure fabrication

Low-energy light ion beams are an essential resource in lithography for nanopatterning magnetic materials and interfaces due to their ability to modify the structure and properties of metamaterials. Here we create ferromagnetic/non-ferromagnetic heterostructures with a controlled layer thickness and nanometer-scale precision. For this, hydrogen ion (H<sup>+</sup>) irradiation is used to reduce the antiferromagnetic nickel oxide (NiO) layer into ferromagnetic Ni with lower fluence than in the case of helium ion (He<sup>+</sup>) irradiation. Our results indicate that H<sup>+</sup> chemical affinity with oxygen is the primary mechanism for efficient atom remotion, as opposed to He<sup>+</sup> irradiation, where the chemical affinity for oxygen is negligible.

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Publication Details

Journal
Nanoscale Horizons
Published
2024-11-19
DOI
https://doi.org/10.1039/d4nh00460d
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Mechanism of oxygen reduction via chemical affinity in NiO/SiO2 interfaces irradiated with keV energy hydrogen and helium ions for heterostructure fabrication

Myriam H. Aguirre, Jorge E. Valdés, Carlos García, Mario Mery et al.
Nanoscale Horizons
Semiconductor materials and devices
article

Mechanism of oxygen reduction via chemical affinity in NiO/SiO2 interfaces irradiated with keV energy hydrogen and helium ions for heterostructure fabrication

Myriam H. Aguirre, Jorge E. Valdés, Carlos García, Mario Mery, Igor Stanković, Claudio González‐Fuentes, Jorge M. Núñez
article en

Abstract

Low-energy light ion beams are an essential resource in lithography for nanopatterning magnetic materials and interfaces due to their ability to modify the structure and properties of metamaterials. Here we create ferromagnetic/non-ferromagnetic heterostructures with a controlled layer thickness and nanometer-scale precision. For this, hydrogen ion (H<sup>+</sup>) irradiation is used to reduce the antiferromagnetic nickel oxide (NiO) layer into ferromagnetic Ni with lower fluence than in the case of helium ion (He<sup>+</sup>) irradiation. Our results indicate that H<sup>+</sup> chemical affinity with oxygen is the primary mechanism for efficient atom remotion, as opposed to He<sup>+</sup> irradiation, where the chemical affinity for oxygen is negligible.

Nanoscale HorizonsVol. 10(3)
Pontificia Universidad Católica de Chile (CL), Universidad de Zaragoza (ES), University of Belgrade (RS), Instituto de Nanociencia y Materiales de Aragón (ES), Institute of Physics Belgrade (RS), Federico Santa María Technical University (CL)
Institute of Physics Belgrade, European Commission, Universidad de Zaragoza, Agencia Nacional de Investigación y Desarrollo, Fondo Nacional de Desarrollo Científico y Tecnológico, H2020 Marie Skłodowska-Curie Actions
Openalex Percentile: Top 82%
Semiconductor materials and devices
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