First-principles modeling of electron-phonon scattering rates in graphene

Graphene, which has a high mobility of charge carriers, which exceeds the mobility of charge carriers for all known materials, is currently considered as one of the most promising materials for the creation of new semiconductor devices. The results of modeling of electron scattering rates are presented for the acoustic and optical phonons in a single layer of graphene without a substrate for small values of energy, which do not exceed 1 eV. When modeling these rates, variants of both emission and absorption of phonons are considered. The obtained dependences of the charge carrier scattering rates will allow us to study the main characteristics of charge carrier transport in semiconductor structures containing graphene layers by modeling using the Monte Carlo method. Characteristics and parameters of graphene can be used to create new heterostructure devices with improved output characteristics.