Electric-field-induced polarization anisotropy of interband photoluminescence in GaAs

Near-infrared photoluminescence spectra of the n-doped gallium arsenide epilayer under heating lateral electric field conditions are studied. The field dependences of hot electron and hole temperatures are determined from photoluminescence spectra and from solving the power balance equation using current–voltage characteristic. Polarization anisotropy of the photoluminescence radiation arising due to the anisotropy of hot electron distribution function and angular dependence of the interband optical matrix element in the momentum space is observed and investigated. The obtained experimental data are in satisfactory agreement with the theoretical model.