Manufacturing carbon nanotube transistors using lift-off process: limitations and prospects
Abstract Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate the performance of CNT FETs, this method now poses challenges for enhancing individual FET performance and is not suitable for scalable fabrication. In this paper, we summarize the limitations of the lift-off process and point out that future advancements in manufacturing techniques should prioritize the development of etching processes.
Authors
- Jia Si (ORCID: https://orcid.org/0000-0003-0737-4905)
- Gao Xi-long
- Zhiyong Zhang (ORCID: https://orcid.org/0000-0003-1622-3447)
Institutions
- Beijing University of Posts and Telecommunications (CN)
- Peking University (CN)
Publication Details
- Journal
- Moore and More
- Published
- 2024-11-18
- DOI
- https://doi.org/10.1007/s44275-024-00016-x
- Citations
- 3
- Primary Topic
- Carbon Nanotubes in Composites
- Type
- article
- Field-Weighted Citation Impact
- 0.35