Er3+-Yb3+-Tm3+ tri-doped La2O3-Al2O3 glasses for low-power-consumption ultrawideband on-chip optical waveguide amplifiers

In the field of short-range optical interconnects, the development of low-power-consumption, ultrawideband on-chip optical waveguide amplifiers is of critical importance. Central to this advancement is the creation of host materials that require low pump power and provide ultrabroadband emission capabilities. We introduce a tri-doped lanthanum aluminate glass (composition: 5Er2O3-5Yb2O3-0.2Tm2O3-43.8La2O3-46Al2O3), which exhibits exceptional near-infrared (NIR) luminescence intensity, significantly outperforming other bands by 3 orders of magnitude. This glass can achieve an ultrawideband NIR gain spanning 478 nm, from 1510 to 1988 nm. Notably, the glass achieves positive optical gain with a low population inversion threshold (P>0.2), highlighting its efficiency and low-power consumption. The high glass transition temperature (Tg∼842°C) and large temperature difference (ΔT∼120°C) between Tg and the onset of crystallization (Tx) indicate excellent thermal stability, which is crucial for producing high-quality amorphous films for on-chip amplifiers. This research examines the unique energy levels and spectral properties of the Er3+-Yb3+-Tm3+ tri-doped glass, assessing its potential for use in ultrawideband on-chip optical waveguide amplifiers. This work lays the groundwork for low-power, ultrabroadband on-chip waveguide amplifiers, offering new avenues for short-range optical interconnect systems.