Quantum Channel Extreme Bandgap AlGaN HEMT
An extreme bandgap Al<sub>0.64</sub>Ga<sub>0.36</sub>N quantum channel HEMT with Al<sub>0.87</sub>Ga<sub>0.13</sub>N top and back barriers, grown by MOCVD on a bulk AlN substrate, demonstrated a critical breakdown field of 11.37 MV/cm-higher than the 9.8 MV/cm expected for the channel's Al<sub>0.64</sub>Ga<sub>0.36</sub>N material. We show that the fraction of this increase is due to the quantization of the 2D electron gas. The polarization field maintains electron quantization in the quantum channel even at low sheet densities, in contrast to conventional HEMT designs. An additional increase in the breakdown field is due to quantum-enabled real space transfer of energetic electrons into high-Al barrier layers in high electric fields. These results show the advantages of the quantum channel design for achieving record-high breakdown voltages and allowing for superior power HEMT devices.
Authors
- G. Simin (ORCID: https://orcid.org/0000-0001-9224-3787)
- Kamal Hussain (ORCID: https://orcid.org/0000-0001-7344-345X)
- M. V. S. Chandrashekhar (ORCID: https://orcid.org/0000-0001-5371-876X)
- Abdullah Mamun (ORCID: https://orcid.org/0000-0002-6210-7829)
- Asif Khan (ORCID: https://orcid.org/0000-0002-4542-6553)
- M. S. Shur (ORCID: https://orcid.org/0000-0003-0976-6232)
Institutions
- University of South Carolina (US)
- Rensselaer Polytechnic Institute (US)
Publication Details
- Journal
- Micromachines
- Published
- 2024-11-15
- DOI
- https://doi.org/10.3390/mi15111384
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62
Funders
- Multidisciplinary University Research Initiative
- Office of Naval Research
- Army Research Office