Enhanced Optical and Electrical Properties of IGZO/Ag/IGZO for Solar Cell Application via Post-Rapid Thermal Annealing
In this paper, we optimized IGZO/Ag/IGZO (IAI) multilayer films by post-rapid thermal annealing (RTA) to enhance the electrical conductivity and optical transmittance in visible wavelengths for solar cell applications. Our optimized device showed an average transmittance of 85% in the visible range, with a lowest sheet resistance of 6.03 Ω/□ when annealed at 500 °C for 60 s. Based on these results, we assessed our device with photo-generated short circuit current density (J<sub>SC</sub>) using a solar cell simulator to confirm its applicability in the solar cell. IAI multilayer RTA at 500 °C for 60 s showed a highest J<sub>SC</sub> of 40.73 mA/cm<sup>2</sup>. These results show that our proposed IAI multilayer film, which showed a high optical transparency and electrical conductivity optimized with post RTA, seems to be excellent transparent electrode for solar cell applications.
Authors
- Yuseong Jang
- Hee‐Dong Kim (ORCID: https://orcid.org/0000-0003-1555-7509)
- Doowon Lee (ORCID: https://orcid.org/0000-0001-6635-5953)
- Taegi Kim
- Chanmin Hwang
Institutions
- Kongju National University (KR)
- Sejong University (KR)
Publication Details
- Journal
- Nanomaterials
- Published
- 2024-11-18
- DOI
- https://doi.org/10.3390/nano14221841
- Citations
- 3
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.63
Funders
- National Research Foundation
- Ministry of Trade, Industry and Energy
- Korea Institute for Advancement of Technology
- National Research Foundation of Korea
- Ministry of Science and ICT, South Korea