On Decreasing of Mismatch-Induced Stress During Growth of Films During Magnetron Sputtering

In this paper we analyzed mass transfer during the growth of epitaxial layers during magnetron sputtering. During the analysis we obtained modifications of properties of films with variation of several parameters. We analyzed possibility to decrease mismatch -induced stress on the considered films during their growth. An analytical approach for analyzing mass transfer was introduced, which makes it possible to take into account the nonlinearity of processes, as well as changes in parameters in space and time.