InSe Nanosheets with In/Au Electrodes for Self-Driven, High Storage Performance Photodetectors

InSe, a semimetallic chalcogenide compound, has gained attention for its exceptional characteristics. This study focuses on the development of a high-performance self-driven photodetector and electric storage device using InSe as the conductive channel and In/Au deposition as the electrodes. The device displayed a remarkable combination of light detection and storage capabilities, with a detect range of 447 to 940 nm under no bias voltage, and a maximum response of 2300 A/W at 1 V bias and 90 mA/W at 0 V bias as well as a response time and detectivity of 56 ms and 2.8 × 1010 Jones, respectively. Furthermore, the integrated device includes electric storage capabilities, maintaining clear high and low resistance states even after 300 cycles, surpassing the performance of previous intrinsic InSe devices. By utilizing In/Au deposition as the electrodes on InSe, the Ohmic contact is formed on the surface, leading to significant charge transfer at the In/InSe interface and enhancing the optoelectronic performance of the device.

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Publication Details

Journal
ACS Applied Nano Materials
Published
2024-11-15
DOI
https://doi.org/10.1021/acsanm.4c05677
Citations
3
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
0.35

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article

InSe Nanosheets with In/Au Electrodes for Self-Driven, High Storage Performance Photodetectors

Liangliang Lin, Haiyan Nan, Shaoqing Xiao, Tao Zhou et al.
3 citations
ACS Applied Nano Materials
Quantum Dots Synthesis And Properties
0.35
article

InSe Nanosheets with In/Au Electrodes for Self-Driven, High Storage Performance Photodetectors

Liangliang Lin, Haiyan Nan, Shaoqing Xiao, Tao Zhou, Dongyang Wan, Xiaoyu Gao, Zhengyang Cai, Xiaofeng Gu, Yang Ding, Meng Wang, Chenglin Wang, Qianqian Wu
article en
3 citations

Abstract

InSe, a semimetallic chalcogenide compound, has gained attention for its exceptional characteristics. This study focuses on the development of a high-performance self-driven photodetector and electric storage device using InSe as the conductive channel and In/Au deposition as the electrodes. The device displayed a remarkable combination of light detection and storage capabilities, with a detect range of 447 to 940 nm under no bias voltage, and a maximum response of 2300 A/W at 1 V bias and 90 mA/W at 0 V bias as well as a response time and detectivity of 56 ms and 2.8 × 1010 Jones, respectively. Furthermore, the integrated device includes electric storage capabilities, maintaining clear high and low resistance states even after 300 cycles, surpassing the performance of previous intrinsic InSe devices. By utilizing In/Au deposition as the electrodes on InSe, the Ohmic contact is formed on the surface, leading to significant charge transfer at the In/InSe interface and enhancing the optoelectronic performance of the device.

ACS Applied Nano MaterialsVol. 7(23)
Jiangnan University (CN), Southeast University (CN)
National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province, Higher Education Discipline Innovation Project, Australian Research Council, Graduate Research and Innovation Projects of Jiangsu Province, Fundamental Research Funds for the Central Universities
Affordable and clean energy
Openalex Percentile: Top 43%
Quantum Dots Synthesis And Properties
0.35
DOISourceOpenAlex
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