Improvement of Memory Window of Silicon Channel Hf₀.₅Zr₀.₅O₂ FeFET by Inserting Al₂O₃/HfO₂/Al₂O₃ Top Interlayer
In this work, we propose a gate structure to enhance the memory window (MW) of Si-channel Hf0.5Zr0.5O2 FeFETs. We achieve an MW of 10.04 V by inserting an Al2O3/HfO2/Al2O3 (AHA) top dielectric interlayer between the ferroelectric Hf0.5Zr0.5O2 layer and the metal gate, where the gate-stack thickness is 14.8 nm. The physical origin is that the Al2O3/HfO2, HfO2/Al2O3, and Al2O3/Hf0.5Zr0.5O2 interfaces can trap charges from the metal gate, contributing to the MW enhancement. This AHA top dielectric multilayer effectively suppresses charge loss compared with a single Al2O3 top dielectric interlayer. Moreover, the de-trapping of charges injected from the metal gate is the primary factor for the degradation of the MW in this structure. Our work provides a guide for improving the MW of FeFET.
Authors
- Tianchun Ye (ORCID: https://orcid.org/0000-0002-2384-9037)
- Runhao Han (ORCID: https://orcid.org/0000-0001-9923-5456)
- Kai Han (ORCID: https://orcid.org/0000-0003-3948-1756)
- Saifei Dai (ORCID: https://orcid.org/0000-0001-7433-9347)
- Wenwu Wang
- Xiaoqing Sun (ORCID: https://orcid.org/0000-0002-9497-7634)
- Tao Hu (ORCID: https://orcid.org/0009-0000-8201-4358)
- Junshuai Chai (ORCID: https://orcid.org/0000-0001-5569-5071)
- Xianzhou Shao (ORCID: https://orcid.org/0000-0003-3033-0396)
- Mingkai Bai (ORCID: https://orcid.org/0000-0001-9808-1694)
- Xiaolei Wang (ORCID: https://orcid.org/0000-0001-9431-0058)
- Yajing Ding
- Jia Yang (ORCID: https://orcid.org/0000-0003-2165-5391)
- Hao Xu
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Microelectronics (CN)
- Weifang University (CN)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-11-15
- DOI
- https://doi.org/10.1109/ted.2024.3489595
- Citations
- 9
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.88
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Shandong Province