Design, Development, and Loss Model Analysis of a Coupled Inductor-Based High Voltage Gain DC–DC Converter
A coupled inductor-based nonisolated dc–dc converter with voltage multipliers (CIVM) and a diode clamping network is proposed in this article. Also, a generalized and simplified approach for analyzing the theoretical aspects of nonisolated dc–dc converters is explained. The proposed topology can produce a higher voltage gain without compromising its efficiency. The clamping network recycles leakage energy in the coupled inductor. Also, this clamping network helps to reduce the voltage stress on the switch and allows the use of metal-oxide-semiconductor field-effect transistor with lower <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\boldsymbol{Rds(on)}$</tex-math></inline-formula> rating. This, in turn, helps to decrease the conduction losses. The inherent nature of the topology offers zero voltage turn-<sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> for the switch which further reduces the switching losses. The topology will also have the advantages of common ground as well as continuous input current. The proposed CIVM topology is designed to provide a voltage gain of eight with a turns ratio of two. A detailed equivalent loss model of the topology with parasitics is developed in this article which will help to estimate the voltage gain and losses of the converter for all operating conditions. The theoretical analysis is supported by simulations conducted in MATLAB/Simulink, and SIMetrix/SIMPLIS SPICE platforms, which are validated by hardware experiments.
Authors
- M P Shreelakshmi
- Nikhil Sasidharan (ORCID: https://orcid.org/0000-0002-8188-3444)
- Smitha Joseph (ORCID: https://orcid.org/0009-0009-6306-3651)
Institutions
- National Institute of Technology Calicut (IN)
Publication Details
- Journal
- IEEE Transactions on Industrial Electronics
- Published
- 2024-11-15
- DOI
- https://doi.org/10.1109/tie.2024.3488355
- Citations
- 2
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.42