Nanoscale Mapping of Carrier Distribution Regulated by Polarization in 2D FeFETs
The emergence of 2D ferroelectrics, sliding ferroelectrics, and 2D ferroelectric semiconductors has greatly expanded the potential applications of two-dimensional ferroelectric field-effect transistors (2D FeFETs) in nonvolatile memory, neuromorphic synapses, and negative capacitance. However, the interaction between ferroelectric and semiconductor layers remains not well understood, and characterization methods to correlate carriers and polarization dynamics at the nanoscale are still lacking. Utilizing in situ scanning microwave impedance microscopy and piezoresponse force microscopy measurements, we employed a Pb(Zr<sub>0.2</sub>Ti<sub>0.8</sub>)O<sub>3</sub>/MoS<sub>2</sub>-based 2D FeFET as an example to reveal, with high spatial resolution, the microscopic redistribution of carriers. This study uncovers the microscopic behavior of ferroelectric-semiconductor heterojunctions, paving the way for a deeper understanding of ferroelectric-gating effects and retention issues at the nanoscale in 2D FeFETs.
Authors
- Boyuan Huang (ORCID: https://orcid.org/0000-0003-4543-1886)
- Yingli Zhang (ORCID: https://orcid.org/0000-0002-6041-9474)
- Mengkang Xu (ORCID: https://orcid.org/0009-0005-1522-4386)
- Shengyao Su (ORCID: https://orcid.org/0000-0002-5020-7056)
- Changjian Li (ORCID: https://orcid.org/0000-0002-5779-7466)
- Fengyuan Zhang (ORCID: https://orcid.org/0000-0003-3040-9942)
- Liqun Lyu
- Chuanlai Ren
Institutions
- Southern University of Science and Technology (CN)
Publication Details
- Journal
- Nano Letters
- Published
- 2024-11-15
- DOI
- https://doi.org/10.1021/acs.nanolett.4c03962
- Citations
- 9
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.88
Funders
- Science and Technology Foundation of Shenzhen City
- National Natural Science Foundation of China
- Guangdong Science and Technology Department
- National Key Research and Development Program of China