Optical and electrical properties of proton-implanted p-GaSb for electrical isolation
Abstract The effect of proton implantation as isolation implant and subsequent annealing on the optical absorption and electrical resistivity of low-bandgap p -GaSb is reported. The measured transmittance spectra indicates that implantation creates a distribution of energy levels extending into the bandgap. Electrical measurements show that the average sheet resistance of the implanted layer increases only by an order of magnitude from its pre-implantation value at a proton dose of ∼10 13 cm −2 followed by 200 °C annealing. It is also shown that annealing reduces the implantation-induced optical absorption while still retaining a high electrical resistivity.
Authors
- Samuel D. Hawkins (ORCID: https://orcid.org/0000-0002-4705-1628)
- Sk Shafaat Saud Nikor (ORCID: https://orcid.org/0000-0003-0217-7128)
- Shrivatch Sankar (ORCID: https://orcid.org/0000-0001-7260-3693)
- Md Saiful Islam Sumon
- Sadhvikas Addamane (ORCID: https://orcid.org/0000-0002-5238-7409)
- Victor J. Patel
- Shamsul Arafin (ORCID: https://orcid.org/0000-0003-4689-2625)
- Like Ma
Institutions
- Sandia National Laboratories (US)
- Center for Integrated Nanotechnologies (US)
- The Ohio State University (US)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2024-11-15
- DOI
- https://doi.org/10.35848/1882-0786/ad9377
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science Foundation
- U.S. Department of Energy
- Center for Integrated Nanotechnologies
- Office of Science
- National Nuclear Security Administration
- Division of Electrical, Communications and Cyber Systems
- Sandia National Laboratories