Visualization of Anion Vacancy Defect Annihilation in CZTSe Solar Cells by Hydrogen-Assisted Selenization with In Operando X-ray Nanoprobe Studies

The traditional sulfur selenization process in Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> (CZTSSe) solar cell fabrication often results in the creation of localized anion vacancies (<i>V</i><sub>S</sub> and <i>V</i><sub>Se</sub>). These vacancies are considered harmful defects as they can trap carriers generated by light, leading to reduced solar cell efficiency. Moreover, concrete evidence has been lacking on the extent of the impact caused by these anion vacancies. Our research introduces a novel approach: the hydrogen-assisted selenization (HAS) process, specifically designed to minimize localized anion vacancies in Cu<sub>2</sub>ZnSnSe<sub>4</sub> (CZTSe) solar cells. Our investigation, utilizing current-voltage (<i>I</i>-<i>V</i>) and admittance spectroscopy measurements, provides clear insights. We observed notable improvements in carrier collection efficiency and a discernible reduction in defect states. Furthermore, there was a significant decrease in the activation energy required within the solar cell device, dropping from 184 to 145 meV. To delve deeper into the structural and compositional aspects, we employed synchrotron-based X-ray nanoprobes. Through nanoscale X-ray fluorescence and hard X-ray beam-induced current measurements, we can directly observe and document the relationship between the local compositional distribution and photocurrent activity in operando. These comprehensive results furnish strong evidence that mitigating anion vacancies in the CZTSe layer can substantially improve the power conversion efficiency of the CZTSe solar cells. This advancement not only sheds light on the critical role of anion vacancies in solar cell performance but also underscores the effectiveness of the HAS process in enhancing overall device efficiency.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2024-11-15
DOI
https://doi.org/10.1021/acsami.4c11127
Citations
5
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
1.04

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article

Visualization of Anion Vacancy Defect Annihilation in CZTSe Solar Cells by Hydrogen-Assisted Selenization with In Operando X-ray Nanoprobe Studies

Gung-Chian Yin, Chih‐Yang Huang, Cheng–Ying Chen, Kuei‐Hsien Chen et al.
5 citations
ACS Applied Materials & Interfaces
Chalcogenide Semiconductor Thin Films
1.04
article

Visualization of Anion Vacancy Defect Annihilation in CZTSe Solar Cells by Hydrogen-Assisted Selenization with In Operando X-ray Nanoprobe Studies

Gung-Chian Yin, Chih‐Yang Huang, Cheng–Ying Chen, Kuei‐Hsien Chen, Li–Chyong Chen, Wei‐Chao Chen, Bo-Yi Chen, Shao‐Chin Tseng
article en
5 citations

Abstract

The traditional sulfur selenization process in Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> (CZTSSe) solar cell fabrication often results in the creation of localized anion vacancies (<i>V</i><sub>S</sub> and <i>V</i><sub>Se</sub>). These vacancies are considered harmful defects as they can trap carriers generated by light, leading to reduced solar cell efficiency. Moreover, concrete evidence has been lacking on the extent of the impact caused by these anion vacancies. Our research introduces a novel approach: the hydrogen-assisted selenization (HAS) process, specifically designed to minimize localized anion vacancies in Cu<sub>2</sub>ZnSnSe<sub>4</sub> (CZTSe) solar cells. Our investigation, utilizing current-voltage (<i>I</i>-<i>V</i>) and admittance spectroscopy measurements, provides clear insights. We observed notable improvements in carrier collection efficiency and a discernible reduction in defect states. Furthermore, there was a significant decrease in the activation energy required within the solar cell device, dropping from 184 to 145 meV. To delve deeper into the structural and compositional aspects, we employed synchrotron-based X-ray nanoprobes. Through nanoscale X-ray fluorescence and hard X-ray beam-induced current measurements, we can directly observe and document the relationship between the local compositional distribution and photocurrent activity in operando. These comprehensive results furnish strong evidence that mitigating anion vacancies in the CZTSe layer can substantially improve the power conversion efficiency of the CZTSe solar cells. This advancement not only sheds light on the critical role of anion vacancies in solar cell performance but also underscores the effectiveness of the HAS process in enhancing overall device efficiency.

ACS Applied Materials & InterfacesVol. 16(47)
National Taiwan Ocean University (TW), National Taiwan University (TW), National Synchrotron Radiation Research Center (TW), Institute of Atomic and Molecular Sciences, Academia Sinica (TW), Academia Sinica (TW)
Academia Sinica, National Taiwan University, National Synchrotron Radiation Research Center, National Science and Technology Council
Openalex Percentile: Top 22%
Chalcogenide Semiconductor Thin Films
1.04
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