Dispersion-engineered InGaAsP/InP waveguide for high efficiency all-optical on-chip wavelength conversion

InGaAsP/InP waveguide platform offers superiority for all-optical on-chip wavelength conversion due to strong optical nonlinearity. However, a small refractive index difference between the core and cladding makes it challenging to achieve sufficient structural dispersion for phase matching. In this work, the InGaAsP multilayer waveguide and the SiN-cladded InGaAsP waveguide are investigated for optimized wavelength conversion at telecom wavelengths. Structural dispersion is effectively engineered through the incorporation of additional slot layers and a heterogeneous passivation layer. Through comparative analysis, the wavelength conversion efficiency of -4.7 dB is achieved by the SiN-cladded waveguide, which shows an improvement of 22 dB compared to traditional nanowire waveguide.