Next generation quantum dot SWIR sensors

Short-wave infrared (SWIR) image sensors play an important role in various defence and security applications, including low-light-level imaging, laser detection and range finding. Pixelated detectors made of indium gallium arsenide (InGaAs) have shown excellent performance for SWIR imaging, however, the cost remains the major barrier for adaptation. <br/> <br/> In this talk we will present a low-cost, next-generation SWIR sensor. We have developed an alternative technology which relies on lead sulfide quantum dot (PbS QD) photon absorber, which is monolithically and directly deposited on a CMOS readout chip via solution-based process. The uncooled sensor achieves the QE of >20% at 1550 nm with the dark current of 50 nA/cm2. Additionally, the sensitivity range can be extended further to 2.1 um. The technology is suitable for wafer-level manufacturing, thus driving the sensor cost more than an order of magnitude lower. We will present a comprehensive characterization of QD-based imager and demonstrate real-life use cases.