Phase transition mechanism and property prediction of hafnium oxide-based antiferroelectric materials revealed by artificial intelligence

Constrained by the inefficiency of traditional trial-and-error methods, especially when dealing with thousands of candidate materials, the swift discovery of materials with specific properties remains a central challenge in contemporary materials research. This study employed an artificial intelligence-driven materials design framework for identifying dopants that impart antiferroelectric properties to HfO 2 materials. This strategy integrates density functional theory (DFT) with machine learning (ML) techniques to swiftly screen HfO 2 materials exhibiting stable antiferroelectric properties based on the critical electric field. This approach aims to overcome the high cost and lengthy cycles associated with traditional trial-and-error and experimental methods. Among 30 undeveloped dopants, four candidate dopants demonstrating stable antiferroelectric properties were identified. Subsequent DFT analysis highlighted the Ga dopant, which displayed favorable characteristics such as a small volume change, minimal lattice deformation, and a low critical electric field after incorporation into hafnium oxide. These findings suggest the potential for stable antiferroelectric performance. Essentially, we established a correlation between the physical characteristics of hafnium oxide dopants and their antiferroelectric performance. The approach facilitates large-scale ML predictions, rendering it applicable to a broad spectrum of functional material designs. • Taking into account the random arrangement of dopant atoms, 225 structural models of HfO 2 were constructed. • A critical electric field theory was proposed for evaluating the antiferroelectric properties of HfO 2 materials. • Physical insights into the stability of the antiferroelectric phase in HfO 2 was extracted through machine learning models. • The antiferroelectric properties of HfO 2 materials doped with novel dopants was predicted and revealed.

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Publication Details

Journal
Journal of Materiomics
Published
2024-11-15
DOI
https://doi.org/10.1016/j.jmat.2024.100968
Citations
1
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.21

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article

Phase transition mechanism and property prediction of hafnium oxide-based antiferroelectric materials revealed by artificial intelligence

Qi Chen, Gang Li, Shaoan Yan, Yingfang Zhu et al.
1 citations
Journal of Materiomics
Ferroelectric and Negative Capacitance Devices
0.21
article

Phase transition mechanism and property prediction of hafnium oxide-based antiferroelectric materials revealed by artificial intelligence

Qi Chen, Gang Li, Shaoan Yan, Yingfang Zhu, Peilong Xu, Yujie Wu, Minghua Tang, Qingjiang Li, Sen Liu
article en
1 citations

Abstract

Constrained by the inefficiency of traditional trial-and-error methods, especially when dealing with thousands of candidate materials, the swift discovery of materials with specific properties remains a central challenge in contemporary materials research. This study employed an artificial intelligence-driven materials design framework for identifying dopants that impart antiferroelectric properties to HfO 2 materials. This strategy integrates density functional theory (DFT) with machine learning (ML) techniques to swiftly screen HfO 2 materials exhibiting stable antiferroelectric properties based on the critical electric field. This approach aims to overcome the high cost and lengthy cycles associated with traditional trial-and-error and experimental methods. Among 30 undeveloped dopants, four candidate dopants demonstrating stable antiferroelectric properties were identified. Subsequent DFT analysis highlighted the Ga dopant, which displayed favorable characteristics such as a small volume change, minimal lattice deformation, and a low critical electric field after incorporation into hafnium oxide. These findings suggest the potential for stable antiferroelectric performance. Essentially, we established a correlation between the physical characteristics of hafnium oxide dopants and their antiferroelectric performance. The approach facilitates large-scale ML predictions, rendering it applicable to a broad spectrum of functional material designs. • Taking into account the random arrangement of dopant atoms, 225 structural models of HfO 2 were constructed. • A critical electric field theory was proposed for evaluating the antiferroelectric properties of HfO 2 materials. • Physical insights into the stability of the antiferroelectric phase in HfO 2 was extracted through machine learning models. • The antiferroelectric properties of HfO 2 materials doped with novel dopants was predicted and revealed.

Journal of MateriomicsVol. 11(4)
Sun Yat-sen University (CN), National University of Defense Technology (CN), Xiangtan University (CN)
National Natural Science Foundation of China, Natural Science Foundation of Hunan Province, National Key Research and Development Program of China
Openalex Percentile: Top 46%
Ferroelectric and Negative Capacitance Devices
0.21
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