Interface energies of Ga<sub>2</sub>O<sub>3</sub> phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained
Ga 2 O 3 /Al 2 O 3 interface energy calculations reveal that the α phase is preferred, explaining the phase-locking epitaxy.
Authors
- Aldo Ugolotti (ORCID: https://orcid.org/0000-0002-4894-070X)
- Leo Miglio (ORCID: https://orcid.org/0000-0002-1329-527X)
- Emilio Scalise (ORCID: https://orcid.org/0000-0003-1465-0939)
- Roberto Bergamaschini (ORCID: https://orcid.org/0000-0002-3686-2273)
- Ilaria Bertoni (ORCID: https://orcid.org/0009-0007-8068-9520)
Institutions
- University of Milano-Bicocca (IT)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2024-11-15
- DOI
- https://doi.org/10.1039/d4tc04307c
- Citations
- 5
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.59
Funders
- European Commission