Atomic scale observation of threading dislocations in <i>α</i>-Ga2O3

This study presents a statistically significant investigation of threading dislocations in α-Ga2O3 using high-resolution transmission electron microscopy. All the dislocations, observed end on, exhibit a projected Burgers vector be=13⟨11̄00⟩, with data revealing that the dislocations fall into three categories: perfect mixed (b=13⟨11̄01⟩) dislocations and edge (b=⟨11̄00⟩ and b=13⟨112̄0⟩) dislocations, which dissociate into combinations of b=13⟨11̄00⟩ partials. High-resolution analysis of the core region of the dislocations identifies that all the dislocations exhibit a similar 5-atom core, when looking at the cation sites. This is the first investigation of its kind in this material system, which will inform future work to, for example, understand the electronic properties of dislocations in α-Ga2O3 and other epitaxial corundum-structured materials.

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Publication Details

Journal
AIP Advances
Published
2024-11-01
DOI
https://doi.org/10.1063/5.0235005
Citations
2
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.24

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article

Atomic scale observation of threading dislocations in α-Ga2O3

Paul R. Chalker, Fabien Massabuau, B. Hourahine, Rachel A. Oliver et al.
2 citations
AIP Advances
Ga2O3 and related materials
0.24
article

Atomic scale observation of threading dislocations in α-Ga2O3

Paul R. Chalker, Fabien Massabuau, B. Hourahine, Rachel A. Oliver, Joseph W. Roberts, Ross Mullen
article en
2 citations

Abstract

This study presents a statistically significant investigation of threading dislocations in α-Ga2O3 using high-resolution transmission electron microscopy. All the dislocations, observed end on, exhibit a projected Burgers vector be=13⟨11̄00⟩, with data revealing that the dislocations fall into three categories: perfect mixed (b=13⟨11̄01⟩) dislocations and edge (b=⟨11̄00⟩ and b=13⟨112̄0⟩) dislocations, which dissociate into combinations of b=13⟨11̄00⟩ partials. High-resolution analysis of the core region of the dislocations identifies that all the dislocations exhibit a similar 5-atom core, when looking at the cation sites. This is the first investigation of its kind in this material system, which will inform future work to, for example, understand the electronic properties of dislocations in α-Ga2O3 and other epitaxial corundum-structured materials.

AIP AdvancesVol. 14(11)
University of Liverpool (GB), University of Strathclyde (GB), University of Cambridge (GB)
Engineering and Physical Sciences Research Council
Openalex Percentile: Top 56%
Ga2O3 and related materials
0.24
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