Thermoelectric Power Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals

A modified Bridgman technique was used to crystallize the Tl4In3GaS8 compound. The rate of change in the thermoelectric power (TEP) as a function of temperature of the Tl4In3GaS8 compound is measured within the temperature range (218–402 K). Measurements revealed that the conductivity of the crystals was n-type. Investigations were conducted into the connection between TEP, charge carrier concentration, and electrical conductivity. The experimental results were used to calculate a number of physical properties, including as mobilities, diffusion coefficients, diffusion lengths, effective masses, and carrier relaxation periods. The overall behavior of the semiconductor is shown by these features. According to our findings, asgrown Tl4In3GaS8 crystals are typically n-type and have the potential to be employed as thermoelectric power generating possibilities.