Inverter Fed Passive Memristor Emulator

The study of nonlinear relation between the magnetic flux linkage and electric charge may shed light on the performance and enable the usage of memristors in different applications. Wide researches are being carried out using memristor emulator circuits to identify its possible applications. An attempt has been made in this paper to fabricate a low voltage memristor emulator circuit and to study its nonlinear characteristics. The nonlinear performance of memristive emulative circuit supplied by a single-phase inverter has been analyzed in this work. A n- channel JFET J310 based memristive circuit is chosen to work with a IGBT based PWM inverter in order to match operating voltage and impedances. The sinusoidal, single and multiple PWM techniques are used to generate gate pulses to switch ON the IGBTs. The fabricated memristor emulator circuit behaves comparatively as excited using steady voltage source. The performance parameters are nonlinear index and phase angle of voltage and current signals. The results from the experiments indicate that the nonlinear index more than 2 have good nonlinearity relation while the phase shift nearer to zero shows simultaneous zero crossing property. The experimental work shows sinusoidal PWM signal has better performance when it is compared with a steady AC supply.