Etching Processing of InGaAs/InAlAs Quantum Cascade Laser

The 3–5 μm mid-infrared band is the atmospheric window band, where there are absorption peaks of many molecules. It plays an important role in trace gas detection, directional infrared countermeasures, biomedicine, and free-space optical communications. The wet etching process of the designed InGaAs/InAlAs quantum cascade laser with superlattice structure was explored to provide a good experimental basis for the research and development of lasers. The HBr:HNO3:H2O series of etching solutions were selected for corrosion experiments, and the surface morphology was observed by scanning electron microscopy (SEM) and metallographic microscopy to obtain the corrosion rate of the etching solution. The experimental results show that the etching liquid ratio is HBr:HNO3:H2O = 1:1:10, and the etching rate is 0.6 μm/min. A quantum cascade laser that works continuously at room temperature was prepared, with an injection strip width of 7 μm, a cavity length of 4mm, and an operating temperature of 20 °C. The device works in continuous mode (CW), with a maximum continuous output power of about 186 mW, a threshold current of about 0.4 A, a threshold current density of about 1.428 kA/cm2, a device center wavelength of about 4424 nm, a side mode suppression ratio of 28 dB, and a spectrum full width at half maximum of 2 nm.