Memristor Array Based on Wafer-Scale 2D HfS<sub>2</sub> for Dual-Mode Physically Unclonable Functions

Conventional Si-based physically unclonable functions (PUFs) take advantage of the unique variations in the fabrication processes. However, these PUFs are hindered by limited entropy sources and susceptibility to noise interference. Here we present a memristive device based on wafer-scale (2-in.) two-dimensional (2D) hafnium disulfide (HfS<sub>2</sub>) grown by molecular beam epitaxy (MBE). The polycrystalline HfS<sub>2</sub> thin film can offer enhanced entropy sources for PUF applications, such as lattice defects, which can facilitate the random formation of conductive filaments and result in significant device-to-device (D2D) variations. Our proposed PUF design seamlessly integrates two distinct operating modes within a single circuit module. First, a reconfigurable and highly secure mode 1, and second, an ultrareliable mode 2, both with near-ideal Entropy (∼1.0), normalized Hamming distance (∼0.5) and correlation coefficient (∼0.0). Additionally, a predictive Fourier regression model further confirms the unpredictable nature of our dual-mode PUF, with an average prediction accuracy of ∼50%.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2024-11-13
DOI
https://doi.org/10.1021/acsami.4c11340
Citations
11
Primary Topic
Physical Unclonable Functions (PUFs) and Hardware Security
Type
article
Field-Weighted Citation Impact
5.38

Funders

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article

Memristor Array Based on Wafer-Scale 2D HfS2 for Dual-Mode Physically Unclonable Functions

Kah‐Wee Ang, Yinfeng Long, Yu‐Chieh Chien, Haofei Zheng et al.
11 citations
ACS Applied Materials & Interfaces
Physical Unclonable Functions (PUFs) and Hardware Security
5.38
article

Memristor Array Based on Wafer-Scale 2D HfS2 for Dual-Mode Physically Unclonable Functions

Kah‐Wee Ang, Yinfeng Long, Yu‐Chieh Chien, Haofei Zheng, Samarth Jain, Mei Er Pam, Sifan Li, Mingxi Chen, Heng Xiang, Dongzhi Chi, Lin Wang, Lingqi Li, Jianwei Chai, Jie Yang
article en
11 citations

Abstract

Conventional Si-based physically unclonable functions (PUFs) take advantage of the unique variations in the fabrication processes. However, these PUFs are hindered by limited entropy sources and susceptibility to noise interference. Here we present a memristive device based on wafer-scale (2-in.) two-dimensional (2D) hafnium disulfide (HfS<sub>2</sub>) grown by molecular beam epitaxy (MBE). The polycrystalline HfS<sub>2</sub> thin film can offer enhanced entropy sources for PUF applications, such as lattice defects, which can facilitate the random formation of conductive filaments and result in significant device-to-device (D2D) variations. Our proposed PUF design seamlessly integrates two distinct operating modes within a single circuit module. First, a reconfigurable and highly secure mode 1, and second, an ultrareliable mode 2, both with near-ideal Entropy (∼1.0), normalized Hamming distance (∼0.5) and correlation coefficient (∼0.0). Additionally, a predictive Fourier regression model further confirms the unpredictable nature of our dual-mode PUF, with an average prediction accuracy of ∼50%.

ACS Applied Materials & InterfacesVol. 16(47)
Agency for Science, Technology and Research (SG), National University of Singapore (SG), Shanghai Jiao Tong University (CN), Institute of Materials Research and Engineering (SG)
National Research Foundation Singapore, Ministry of Education - Singapore, National Natural Science Foundation of China, Science and Engineering Research Council
Affordable and clean energy
Openalex Percentile: Top 3%
Physical Unclonable Functions (PUFs) and Hardware Security
5.38
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