Direct Linearly Polarized Emission in van der Waals LEDs via Flexoelectric Effect

Abstract Following the rapid development of information technology, modern polarized light, which is a critical component for display and data transmission, has been in demand for miniaturization and high efficiency, rendering two‐dimensional (2D) semiconductors potential candidates. The traditional polarized light is usually generated by external optical structures or polarizers that influence the scaling and bring up losses. Previous works have reported polarized light emission from inversion‐asymmetric 2D semiconductors such as black phosphorus (BP), black arsenide phosphorus (AsP), and rhenium disulfide (ReS 2 ), however, their emission wavelengths are not in the visible range. Here, a direct emission of linearly polarized light is demonstrated from van der Waals light–emitting diodes (vdWLEDs) via the flexoelectric effects by inducing the non‐uniform strain in monolayer (ML) transition metal dichalcogenides (TMDCs). In this work, the effects of strain including excitonic binding energy and exciton dipole moment distribution is analyzed by the density functional theory (DFT) then we show that linearly polarized photoluminescence (PL) with a degree of linear polarization (DOLP) of ≈17% can be realized at room temperature (RT), and the polarization angle is perpendicular to the direction of the strain‐gradient. By incorporating the strained ML TMDCs into vdWLEDs, electroluminescence (EL) with DOLP of ≈19% can be observed at RT. This work puts forward a direct and universal strategy for fabricating polarized LEDs based on inversion‐symmetric semiconductors.