Au‐Free Ti/Al/Ni/TiN Ohmic Contact to AlGaN/GaN Heterostructure: Ti/Al Thicknesses at an Optimized Ratio

Although a few studies report that tuning Ti/Al thicknesses at a fixed ratio can further improve the Ohmic contact to AlGaN/GaN heterostructure, systematic physical mechanisms have not been reported. In this work, after determining the optimal Ti/Al ratio of 1/4, two metal stacks with varying Ti/Al thicknesses and fixed Ni/TiN thicknesses are deposited to investigate how tuning Ti/Al thicknesses at an optimized ratio enhances the Ohmic contact performance. At the optimal annealing condition (950 °C, 45 s) of samples with Ti/Al thicknesses of 20/80 nm, samples with Ti/Al thicknesses of 35/140 nm exhibit a reduction of 48% in contact resistance and 70% in specific contact resistivity ( ρ c ). By correlating the results from ρ c – T measurements, time‐of‐flight secondary ion mass spectrometry, and high‐resolution X‐ray diffraction, it has been determined that this method effectively enables N‐vacancies doping into the heterostructure, thereby increasing the carrier concentration and reducing both the height and width of the interfacial potential barrier, achieving a more efficient carrier transport. By avoiding the use of Au with high solubility and ductility, this approach significantly improves contact performance without adversely affecting the electrode surface morphology, demonstrating good adaptability for optimizing Au‐free Ohmic contacts.