Methodology of Production of Photo-Sensitive Elements on Ptsi Basis

Schottky barrier diodes based on PtSi-Si contact can be used as detectors for registration of radiation in the infrared spectral region. However, the quantum efficiency of such receivers is very low compared to photodetectors based on narrow-gap semiconductors and p-n junctions. To increase the quantum efficiency of Schottky receivers, as it will be shown below, they are made in the form of the so-called “optical cavity”, and the thickness of PtSi should not exceed 100 A0. For this purpose we have developed a technological mode of multilayer metallization to obtain thin PtSi-Si contacts.