Plasmochemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium

The kinetics of interaction of high-frequency plasma of difluorodichloromethane and its mixture with helium with the surface of gallium arsenide was experimentally studied. It was established that in the studied range of conditions, complete decomposition of the original difluorodichloromethane molecule to atomic carbon occurs. It has been confirmed that the main chemically active particles responsible for etching are reactive chlorine atoms. It has been shown that the etching process occurs in the mode of an ion-stimulated chemical reaction, where the desorption of products under the influence of ion bombardment plays a significant role in surface cleaning. The emission spectra of plasma radiation in the presence of a gallium arsenide semiconductor wafer are analyzed. Control lines and stripes were selected to control the speed of the etching process based on the emission intensity of the lines and stripes of the etching products.