Amplified spontaneous emission and photoresponse characteristics in highly defect tolerant CsPbCl<sub> <i>x</i> </sub>Br<sub>3−<i>x</i> </sub> crystal

All inorganic perovskite CsPbX 3 with excellent optical properties and a tunable bandgap is a potential candidate for optoelectronic applications, and the amplified spontaneous emission (ASE) is normally reported in low-dimensional structures where the quantum confinement enhances ASE. Herein, we not only demonstrate the ASE in millimeter size CsPbCl x Br 3− x crystal with a high defect concentration, but also tune the emission wavelength from the green band to blue band through the ion exchange of Br with Cl. The ASE centered at ∼456 nm is probed at 50 K with a threshold of 106 μJ / cm 2 . Furthermore, a metal-semiconductor-metal (MSM) structure CsPbCl x Br 3− x photodetector is fabricated and shows a distinct response to lights from UV to the blue band; the response spectrum range is quite different from the narrow band (∼30 nm ) response of the CsPbBr 3 photodetector induced by a charge collection narrowing (CCN) mechanism. The CsPbCl x Br 3− x photodetector also exhibits fast response speeds with a rise time of 96 μs and a decay time of 34 μs, indicating the defects have limited influence on the transportation speed of the photo-generated carriers.

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Publication Details

Journal
Photonics Research
Published
2024-11-13
DOI
https://doi.org/10.1364/prj.539352
Citations
5
Primary Topic
Solid State Laser Technologies
Type
article
Field-Weighted Citation Impact
1.04
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article

Amplified spontaneous emission and photoresponse characteristics in highly defect tolerant CsPbCl x Br3−x crystal

Bingheng Meng, Longxing Su, Heng Li, Rui Chen et al.
5 citations
Photonics Research
Solid State Laser Technologies
1.04
article

Amplified spontaneous emission and photoresponse characteristics in highly defect tolerant CsPbCl x Br3−x crystal

Bingheng Meng, Longxing Su, Heng Li, Rui Chen, Yuan Zhu, Zhuo Yu
article en
5 citations

Abstract

All inorganic perovskite CsPbX 3 with excellent optical properties and a tunable bandgap is a potential candidate for optoelectronic applications, and the amplified spontaneous emission (ASE) is normally reported in low-dimensional structures where the quantum confinement enhances ASE. Herein, we not only demonstrate the ASE in millimeter size CsPbCl x Br 3− x crystal with a high defect concentration, but also tune the emission wavelength from the green band to blue band through the ion exchange of Br with Cl. The ASE centered at ∼456 nm is probed at 50 K with a threshold of 106 μJ / cm 2 . Furthermore, a metal-semiconductor-metal (MSM) structure CsPbCl x Br 3− x photodetector is fabricated and shows a distinct response to lights from UV to the blue band; the response spectrum range is quite different from the narrow band (∼30 nm ) response of the CsPbBr 3 photodetector induced by a charge collection narrowing (CCN) mechanism. The CsPbCl x Br 3− x photodetector also exhibits fast response speeds with a rise time of 96 μs and a decay time of 34 μs, indicating the defects have limited influence on the transportation speed of the photo-generated carriers.

Photonics ResearchVol. 13(2)
Changchun University of Science and Technology (CN), Dongguan University of Technology (CN), Southern University of Science and Technology (CN)
Openalex Percentile: Top 22%
Solid State Laser Technologies
1.04
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