Amplified spontaneous emission and photoresponse characteristics in highly defect tolerant CsPbCl<sub> <i>x</i> </sub>Br<sub>3−<i>x</i> </sub> crystal
All inorganic perovskite CsPbX 3 with excellent optical properties and a tunable bandgap is a potential candidate for optoelectronic applications, and the amplified spontaneous emission (ASE) is normally reported in low-dimensional structures where the quantum confinement enhances ASE. Herein, we not only demonstrate the ASE in millimeter size CsPbCl x Br 3− x crystal with a high defect concentration, but also tune the emission wavelength from the green band to blue band through the ion exchange of Br with Cl. The ASE centered at ∼456 nm is probed at 50 K with a threshold of 106 μJ / cm 2 . Furthermore, a metal-semiconductor-metal (MSM) structure CsPbCl x Br 3− x photodetector is fabricated and shows a distinct response to lights from UV to the blue band; the response spectrum range is quite different from the narrow band (∼30 nm ) response of the CsPbBr 3 photodetector induced by a charge collection narrowing (CCN) mechanism. The CsPbCl x Br 3− x photodetector also exhibits fast response speeds with a rise time of 96 μs and a decay time of 34 μs, indicating the defects have limited influence on the transportation speed of the photo-generated carriers.
Authors
- Bingheng Meng
- Longxing Su (ORCID: https://orcid.org/0000-0001-8687-390X)
- Heng Li (ORCID: https://orcid.org/0000-0001-5276-1846)
- Rui Chen (ORCID: https://orcid.org/0000-0002-4519-6479)
- Yuan Zhu (ORCID: https://orcid.org/0009-0003-0323-8188)
- Zhuo Yu (ORCID: https://orcid.org/0000-0002-5286-392X)
Institutions
- Changchun University of Science and Technology (CN)
- Dongguan University of Technology (CN)
- Southern University of Science and Technology (CN)
Publication Details
- Journal
- Photonics Research
- Published
- 2024-11-13
- DOI
- https://doi.org/10.1364/prj.539352
- Citations
- 5
- Primary Topic
- Solid State Laser Technologies
- Type
- article
- Field-Weighted Citation Impact
- 1.04