Study on magnetorheological polishing processing characteristics of different crystal planes of SiC

As the third-generation wide band gap semiconductor material, single crystal silicon carbide has high electron saturation mobility and excellent thermal properties. It has broad application prospects in the manufacture of high temperature and radiation resistant high frequency and high-power devices. Magnetorheological polishing of silicon carbide wafers has the characteristics of high efficiency and non-destructive processing, but there is a lack of research on magnetorheological polishing of Si and C surfaces at this stage. Therefore, this paper studies the following aspects. Firstly, through the removal function experiment of multi-parameter comparison, the difference between the residence time of magnetorheological polishing and the removal effect of SiC Si and C surfaces is analyzed, and the efficiency evolution law of magnetorheological polishing of different crystal surfaces is obtained. The influence of different immersion depth of polishing ribbon on the removal efficiency of different crystal faces was explored, and the relationship between polishing depth and material removal rate under different crystal faces was obtained. The results show that with the increase of residence time, the removal efficiency of Si and C surfaces increases, and the growth rate of Si surface is much larger than that of C surface. With the increase of immersion depth, the growth rate of material removal efficiency of C surface is more sensitive than that of Si surface. Therefore, this study explores the technical feasibility of magnetorheological polishing of SiC, and provides a new idea for high-efficiency and high-precision polishing of SiC.