Low-G In-Plane Multi-Directional MEMS Inertial Switch With Multiple Acceleration Thresholds
Abstract This paper reports a low-g in-plane MEMS inertial switch with multiple acceleration thresholds in multiple sensing directions. Designed for essential monitoring, this device targets low-g accelerations for health and safety applications. The device design utilizes the standard silicon-on-insulator micromachining process (SOIMUMPs) to simplify both fabrication and packaging. Through extensive testing, we demonstrate the switch ability to detect accelerations ranging from 45g to 88g. Despite minor discrepancies due to fabrication imperfections, the experimental results closely match the finite-element simulation results.
Authors
- Qiu Xu (ORCID: https://orcid.org/0000-0003-3597-3497)
- Mohammad I. Younis (ORCID: https://orcid.org/0000-0002-9491-1838)
- Éric Féron (ORCID: https://orcid.org/0000-0001-7717-2159)
- Raed Alahmdi (ORCID: https://orcid.org/0000-0003-1181-6673)
- Yousef Algoos (ORCID: https://orcid.org/0000-0002-4173-5527)
Institutions
- Binghamton University (US)
- Saudi Aramco (Saudi Arabia) (SA)
- King Abdullah University of Science and Technology (SA)
Publication Details
- Published
- 2024-08-25
- DOI
- https://doi.org/10.1115/detc2024-143844
- Citations
- 1
- Primary Topic
- Advanced MEMS and NEMS Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21