A wideband front-end with integrated high-voltage assisted input buffer for high-speed ADC
This letter presents an integrated high-voltage assisted high-linearity wideband front end for high-speed analog-to-digital converters (ADCs). The on-chip high-voltage generation provides high-swing current injection, which effectively improves flatness within the bandwidth and power supply fluctuation suppression for input buffer. Additionally, modeling and analysis of the front end matching network, along with the inclusion of inductive compensation, increased the bandwidth by 3.1GHz compared to traditional structures. Using 28nm CMOS technology, the front end achieves an SNDR of 56.21dB and an SFDR of 67.48dBc with a FoMs of 163.7dB at a 6GHz input.
Authors
- Hanbo Jia (ORCID: https://orcid.org/0000-0002-8719-5757)
- Kai Sun (ORCID: https://orcid.org/0000-0002-0343-6032)
- Xuan Guo (ORCID: https://orcid.org/0000-0001-8052-6165)
- Danyu Wu
- Shuangbao Jia
- Heping Ma (ORCID: https://orcid.org/0000-0002-7551-2639)
- Xinyu Liu (ORCID: https://orcid.org/0000-0003-0854-8559)
- Zilin Jiang
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- IEICE Electronics Express
- Published
- 2024-11-13
- DOI
- https://doi.org/10.1587/elex.21.20240640
- Citations
- 2
- Primary Topic
- Analog and Mixed-Signal Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.37
Funders
- National Natural Science Foundation of China