Study of In0.53Ga0.47As/ InP/InAlAs/InP heterostructures by ToF-SIMS and HAXPES
Authors
E. Martínez (ORCID: https://orcid.org/0000-0003-0889-2237)
T. Baron (ORCID: https://orcid.org/0000-0001-5005-6596)
M. Veillerot (ORCID: https://orcid.org/0000-0002-9593-5647)
M. Martin
F. Bassani (ORCID: https://orcid.org/0000-0001-8688-1328)
G. Tsamo Tagougue
V. Thoréton
Institutions
Institut polytechnique de Grenoble (FR)
Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
CEA Grenoble (FR)
Laboratoire des Technologies de la Microélectronique (FR)
Laboratoire d'Électronique des Technologies de l'Information (FR)
Publication Details
Journal
SPIRE - Sciences Po Institutional REpository
Published
2024-09-08
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
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article
Study of In0.53Ga0.47As/ InP/InAlAs/InP heterostructures by ToF-SIMS and HAXPES
E. Martínez, T. Baron, M. Veillerot, M. Martin et al.
Journal
SPIRE - Sciences Po Institutional REpository
Topics
Semiconductor Quantum Structures and Devices
article
Study of In0.53Ga0.47As/ InP/InAlAs/InP heterostructures by ToF-SIMS and HAXPES
E. Martínez, T. Baron, M. Veillerot, M. Martin, F. Bassani, G. Tsamo Tagougue, V. Thoréton
article en
Abstract
No abstract available for this paper.
Publication Tag
SPIRE - Sciences Po Institutional REpository
Institutions
Institut polytechnique de Grenoble (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Laboratoire des Technologies de la Microélectronique (FR), Laboratoire d'Électronique des Technologies de l'Information (FR)