Nanometer-thick TiO2 channel thin film transistors as radical monitors for plasma enhanced atomic layer deposition

Nanometer-thick-TiO2-channel thin-film transistors (TFTs) are examined as oxidizing-agent monitors for room-temperature atomic layer deposition (RTALD). RTALD is a plasma-based process using plasma-excited humidified argon where OH radicals oxidize the precursor-gas adsorbed surface. In the TFT, the anatase TiO2 channel, with a thickness of 16 nm, is attached to a 300 nm thick gate capacitor of SiO2, while the channel surface is exposed to the ALD ambient. A heavily doped n-type Si substrate attached to the gate SiO2 is used as the gate electrode. The gate width and length are 1000 and 60 μm, respectively. When the TFT is installed in the RTALD chamber, the drain-current waveform is recorded in the course of the metal organic gas adsorption, evacuation of the residual gas, oxidization, and evacuation. In the present study, three kinds of metal organic (MO) precursors, tetrakis(dimethyl)amino titanium, tris(dimethyl)amino silane, and trimethyl aluminum are examined. The drain current exhibits strong responses upon the exposure of the plasma excited humidified argon. This suggests that OH radicals in the plasma might oxidize the adsorbed MO precursors to produce the OH moieties, where the surface polarization of OH moieties might enhance channel conductivity. The experimental results suggest the applicability of the present TFT as a plasma monitor in RTALD.