Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta₂O₅/Al₂O₃/TiN Memristors

This study introduces a Ta₂O₅-based self-rectifying memristor (SRM) with an Al₂O₃ interfacial layer adopted to improve switching uniformity, read voltage margin, and long-term retention. The Pt/Ta₂O₅/Al₂O₃/TiN (PTAT) device exhibits a 10⁵ rectification ratio, 10⁴ on/off ratio, 2 × 10⁶ endurance, and retention of 10⁴ s at 150 °C. A 3-layer 4 × 4 vertical resistive random access memory structure exhibits uniform switching parameters. The coefficient of variation (CV) for device-to-device measurements is 0.23 for the low resistance state (LRS) and 0.22 for the high resistance state (HRS), while for cycle-to-cycle measurements, the CV is 0.38 for the LRS and 0.11 for the HRS. Finally, the present study demonstrates the superior performance of the PTAT devices in the context of hardware-aware training for a fully connected neural network implementation. These advancements position the PTAT device as a promising candidate for high-density three-dimensional storage class memory and low-power neural networks, offering the consistent performance and reliability necessary for future high-density storage applications.