A Low-Power, High-Swing LDMOS Driver Amplifier for Shuttling Controller in a Trapped-Ion Quantum Computer Operating at 4 K

This work presents a three-stage, low-power, low-noise, high-voltage (HV) operational amplifier (op-amp) capable of amplifying arbitrary waveforms at cryogenic temperatures to the high-voltage levels necessary to drive electrodes of a quantum processor. Intended for future integration into a larger system on chip (SoC), this HV op-amp would be the final stage of a shuttling controller in a trapped-ion quantum computer (TIQC). The op-amp provides amplified signals from an arbitrary waveform generator (AWG) to trap electrodes to control the shuttling of ions inside the trap. Measurements conducted both at room temperature and at 4 K to prove its functionality. The op-amp is implemented in 130 nm HV bulk CMOS technology offering laterally-diffused metal-oxide semiconductor (LDMOS) transistors. It consumes 7.2 mW from a dual power supply of 4.3 V and 24 V. The DC gain was measured at 4 K to be around 66 dB. With a load of 31 pF, a slew rate of $17 \mathrm{~V} / \mathrm{\mu}$ s was obtained at a full-scale (FS) output swing of 16 V. Keywords - quantum computing (QC), high-voltage (HV), operational amplifier (op-amp)