300-GHz-Band InP HBT Power Amplifier and InP-CMOS Hybrid Phased-Array Transmitter

In this invited paper, we introduce a 300-GHz-band power amplifier (PA) IC and module designed and fabricated in 250-nm InP DHBT technology and a 300-GHz-band InP-CMOS hybrid phased array transmitter for 6G. Our PA module achieved a maximum gain of 30 dB around 260 GHz and maintained over 20 dB within a range from 220 to 310 GHz. It also achieved a saturation power of $9 \mathbf{~ d B m}$ at 270 GHz and demonstrated point-to-point wireless data transmission with a data rate of 100 Gbps at a distance of 40 m. Our phased array transmitter, in which four InP-HBT PA ICs and CMOS ICs containing mixers and control functions are integrated onto the same printed circuit board, achieved a maximum EIRP of $\mathbf{8. 4 ~ d B m}$ and steering range of 36° and successfully demonstrated wireless data transmission of up to 30 Gbps over a distance of 50 cm with beam steering.

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Publication Details

Published
2024-10-27
DOI
https://doi.org/10.1109/bcicts59662.2024.10745694
Citations
2
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.42
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article

300-GHz-Band InP HBT Power Amplifier and InP-CMOS Hybrid Phased-Array Transmitter

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2 citations
Radio Frequency Integrated Circuit Design
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article

300-GHz-Band InP HBT Power Amplifier and InP-CMOS Hybrid Phased-Array Transmitter

Munehiko Nagatani, Hitoshi Wakita, Adam Pander, Daisuke Kitayama, Chenxin Liu, Atsushi Shirane, Teruo Jyo, Ashbir Aviat Fadila, Yuta Shiratori, Kenichi Okada, Carrel da Gomez, Ibrahim Abdo, Jian Pang, Hiroshi Hamada, Chun Wang, Miwa Mutoh, Hiroyuki Takahashi, Kota Hatano
article en
2 citations

Abstract

In this invited paper, we introduce a 300-GHz-band power amplifier (PA) IC and module designed and fabricated in 250-nm InP DHBT technology and a 300-GHz-band InP-CMOS hybrid phased array transmitter for 6G. Our PA module achieved a maximum gain of 30 dB around 260 GHz and maintained over 20 dB within a range from 220 to 310 GHz. It also achieved a saturation power of $9 \mathbf{~ d B m}$ at 270 GHz and demonstrated point-to-point wireless data transmission with a data rate of 100 Gbps at a distance of 40 m. Our phased array transmitter, in which four InP-HBT PA ICs and CMOS ICs containing mixers and control functions are integrated onto the same printed circuit board, achieved a maximum EIRP of $\mathbf{8. 4 ~ d B m}$ and steering range of 36° and successfully demonstrated wireless data transmission of up to 30 Gbps over a distance of 50 cm with beam steering.

Tokyo Institute of Technology (JP), NTT (Japan) (JP)
Affordable and clean energy
Openalex Percentile: Top 37%
Radio Frequency Integrated Circuit Design
0.42
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